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| SI9913 New Product Vishay Siliconix Dual MOSFET Bootstrapped Driver with Break-Before-Make FEATURES D D D D D D D D D 4.5- to 5.5-V Operation Undervoltage Lockout 250-kHz to 1-MHz Switching Frequency Synchronous Switch Enable One Input PWM Signal Generates Both Drive Bootstrapped High-Side Drive Operates from 4.5- to 30-V Supply TTL/CMOS Compatible Input Levels 1-A Peak Drive Current APPLICATIONS D D D D D Multiphase Desktop CPU Supplies Single-Supply Synchronous Buck Converters Mobile Computing CPU Core Power Converters Standard-to-Synchronous Converter Adaptations High Frequency Switching Converters DESCRIPTION The SI9913 is a dual MOSFET high-speed driver with break-before-make. It is designed to operate in high frequency dc-dc switchmode power supplies. The high-side driver is bootstrapped to handle the high voltage slew rate associated with "floating" high-side gate drivers. Each driver is capable of switching a 3000-pF load with 60-ns propogation delay and 25-ns transition time. The SI9913 comes with internal break-before-make feature to prevent shoot-through current in the external MOSFETs. A syschronous enable pin is used to enable the low-side driver. When disabled, the OUTL is logic low. The SI9913 is available in an 8-pin SOIC package for operation over the industrial operation range (-40_C to 85_C). FUNCTIONAL BLOCK DIAGRAM AND TRUTH TABLE VDD D1 BOOT Q1 OUTH Level Shift Undervoltage VDC CBOOT TRUTH TABLE VS VDD S1 VS L L L SYN L L H H L L H H IN L H L H L H L H VOUTL L L H L L L L L VOUTH L H L H L H L H D2 OUTL IN SYN Q2 L H H H + - VBBM GND H Document Number: 71343 S-02882--Rev. A, 21-Dec-00 www.vishay.com 1 SI9913 Vishay Siliconix New Product ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Low Side Driver Supply Voltage Input Voltage on IN Synchronous Pin Voltage Bootstrap Voltage High Side Driver (Bootstrap) Supply Voltage Operating Junction Temperature Range Storage Temperature Range Power Dissipation (Note a and b) Thermal Impedance Lead Temperature (soldering 10 Sec) Notes a. Device mounted with all leads soldered to P.C. Board b. Derate 8.3 W/_C above 25_C Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Symbol VDD VIN VSYN VBOOT VBOOT - VS TJ Tstg PD qJA Sec Limit 7.0 -0.3 to VDD +0.3 -0.3 to VDD +0.3 35.0 7.0 -40 to 125 -40 to 150 830 125 300 Unit V _C _ mW C/W C RECOMMENDED OPERATING CONDITIONS Parameter Bootstrap Voltage (High-Side Drain Voltage) Logic Supply Bootstrap Capacitor Ambient Temperature Symbol VBOOT VDD CBOOT TA Limit 4.5 to 30 4.5 to 5.5 100 n to 1 m -40 to 85 Unit V F _C SPECIFICATIONS Test Conditions Unless Specified Parameter Power Supplies VDD Supply IDD Supply IDD Supply IDD Supply IDD Supply IDD Supply IDD Supply Boot Strap Current VDD IDD1 (en) IDD2(en) IDD3(dis) IDD4(en) IDD5(dis) IDD(en) IDD(dis) IBOOT SYN = H, IN = H, VS = 0 V SYN = H, IN = L, VS = 0 V SYN = L, IN = X, VS = V SYN = H, IN = X, VS = 25 V, VBOOT = 30 V SYN = L, IN = X, VS = 25 V, VBOOT = 30 V FIN = 300 kHz, SYN = High, Driving 2 X Si4412DY FIN = 300 kHz, SYN = Low, Driving 2 X Si4412DY VBOOT = 30 V, VS = 25 V, VOUTH = H 0.9 9 5 3 mA 4.5 5.5 1000 500 500 200 200 mA m Limits Mina Typb Maxa Unit Symbol VBOOT = 4.5 to 30 V, VDD = 4.5 to 5.5 V TA = -40 to 85_C Reference Voltage Break-Before-Make Reference Voltage VBBM 1.1 3 V Logic Inputs (SYN, IN) Input High Input Low VIH VIL 0.7 VDD -0.3 VDD + 0.3 0.3 VDD V Undervoltage Lockout VDD Undervoltage VDD Undervoltage Hysteresis www.vishay.com VUVL VHYST VDD Rising 3.7 0.4 4.3 V 2 Document Number: 71343 S-02882--Rev. A, 21-Dec-00 SI9913 New Product SPECIFICATIONS Test Conditions Unless Specified Parameter Bootstrap Diode Diode Forward Voltage VFD1 Forward Current = 100 mA 0.8 1 V Vishay Siliconix Limits Mina Typb Maxa Unit Symbol VBOOT = 4.5 to 30 V, VDD = 4.5 to 5.5 V TA = -40 to 85_C Output Drive Current OUTH Source Current OUTH Sink Current OUTL Source Current OUTL Sink Current IOUT( H+) IOUT(H-) IOUT (L+) IOUT(L-) VBOOT - VS = 3.7 V, VOUTH - VS = 2 V VBOOT - VS = 3.7 V, VOUTH - VS = 1 V VDD = 4.5 V, VOUTL = 2 V VDD = 4.5 V, VOUTL = 1 V 0.6 0.4 A -0.4 -0.4 Timing (CLOAD = 3 nF) OUTL Off Propagation Delay OUTL On Propagation Delay OUTH Off Propagation Delay OUTH On Propagation Delay OUTL Turn On Time OUTL Turn Off Time OUTH Turn On Time OUTH Turn Off Time tpdl(OUTL) tpdh(OUTL) tpdl(OUTH) tpdh(OUTH) tr(OUTL) tf(OUTL) tr(OUTH) tf(OUTH) 30 VDD = 4.5 V VBOOT - VS = 4.5 V OUTL = 10 to 90% OUTL = 90 to 10% OUTH - VS = 10 to 90% OUTH - VS = 90 to 10% 20 30 20 25 25 30 30 ns Notes a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. TIMING WAVEFORMS IN 50% 50% tpdh(OUTL) tf(OUTL) 90% OUTL 10% tpdl(OUTH) 90% 10% tr(OUTL) tpdl(OUTL) tr(OUTH) 90% 10% 90% 10% tf(OUTH) tpdh(OUTH) OUTH VS Document Number: 71343 S-02882--Rev. A, 21-Dec-00 www.vishay.com 3 SI9913 Vishay Siliconix PIN CONFIGURATION SO-8 OUTH GND IN SYN 1 2 3 4 Top View 8 7 6 5 VS BOOT VDD OUTL New Product PIN DESCRIPTION Pin Number 1 2 3 4 5 6 7 8 Name OUTH GND IN SYN OUTL VDD BOOT VS Output drive for upper MOSFET. Ground supply CMOS level input signal. Controls both output drives. Function Synchronous enable. When logic is high, the low-side driver is enabled. Output drive for lower MOSFET. Input power supply Floating bootstrap supply for the upper MOSFET Floating GND for the upper MOSFET. VS is connected to the buck switching node and the source side of the upper MOSFET. ORDERING INFORMATION Part Number SI9913DY SI9913DY-T1 Temperature Range -40 to 85_C _ Package Bulk Tape and Reel Eval Kit SI9913DB Temperature Range -40 to 85_C Board Type Surface Mount TYPICAL WAVEFORMS Driver On Switch Delay VS CL = Si4412DY VS Driver Off Switch Delay CL = Si4412DY OUTH OUTH OUTL OUTL IN Si9912 tr, tf, tpd IN Si9912 tr, tf, tpd www.vishay.com 4 Document Number: 71343 S-02882--Rev. A, 21-Dec-00 SI9913 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) IDD Supply Current vs. Frequency 30 50 Vishay Siliconix Rise and Fall Time vs. CLOAD 40 10 Current (mA) Rise and Fall times (ns) tr(OUTH) 30 tf(OUTL) tf(OUTH) tr(OUTL) 20 10 1 1 10 100 1000 Frequency (kHz) 0 0.3 1 3 10 Load Capacitance (nF) VOUT(H+) vs. Supply 0 0.5 A -1 Output Voltage Drop (V) Output Voltage Drop (V) 4 5 VOUT(H-) vs. Supply 2A 3 1.5 A 2 1A 1 0.5 A -2 1A -3 1.5 A -4 -5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Supply Voltage (V) Supply Voltage (V) VOUT(L+) vs. Supply 0 0.5 A -1 1A Output Voltage Drop (V) -2 1.5 A -3 Output Voltage Drop (V) 2.0 2.5 VOUT(L-) vs. Supply 1.5 2A 1.5 A 1.0 1A 0.5 0.5 A -4 2A -5 -6 4.0 4.5 5.0 Supply Voltage (V) 5.5 6.0 0.0 4.0 4.5 5.0 Supply Voltage (V) 5.5 6.0 Document Number: 71343 S-02882--Rev. A, 21-Dec-00 www.vishay.com 5 SI9913 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) VOUT(H+) vs. Temperature 0 5 VOUT(H-) vs. Temperature -1 Output Voltage Drop (V) 0.5 A Output Voltage Drop (V) 4 -2 1A -3 3 2A 2 1A 1 0.5 A 1.5 A -4 -5 -50 -25 0 25 50 75 100 0 -50 -25 0 25 50 75 100 Temperature (_C) Temperature (_C) VOUT(L+) vs. Temperature 0 0.5 A -1 Output Voltage Drop (V) Output Voltage Drop (V) 1A -2 1.5 A -3 1.5 2.0 VOUT(L-) vs. Temperature 2A 1.0 1.5 A 1A 0.5 0.5 A -4 2A -5 -50 0.0 -50 -25 0 25 50 75 100 -25 0 25 50 75 100 Temperature (_C) Temperature (_C) THEORY OF OPERATION Break-Before-Make Function The SI9913 has an internal break-before-make function to ensure that both high-side and low-side MOSFETs are not turned on at the same time. The high-side drive (OUTH) will not turn on until the low-side gate drive voltage (measured at the OUTL pin) is less than VBBM, thus ensuring that the low-side MOSFET is turned off. The low-side drive (OUTL) will not turn on until the voltage at the MOSFET half-bridge output (measured at the VS pin) is less than VBBM, thus ensuring that the high-side MOSFET is turned off. www.vishay.com Under Voltage Lockout Function The SI9913 has an internal under-voltage lockout feature to prevent driving the MOSFET gates when the supply voltage (at VDD) is less than the under-voltage lockout specification (VUVL). This prevents the output MOSFETs from being turned on without sufficient gate voltage to ensure they are fully on. There is hysteresis included in this feature to prevent lockout from cycling on and off. 6 Document Number: 71343 S-02882--Rev. A, 21-Dec-00 |
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